Method for manufacturing semiconductor device and semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorYusuke Morisaki
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Abstract
A method for manufacturing a semiconductor device includes, forming, on a substrate, an element isolation insulating film which includes a protruding portion protruding above a level of a surface of the substrate, forming a first film on the substrate and on the element isolation insulating film, polishing the first film to expose the protruding portion, forming a first resist pattern which straddles the first film and the protruding portion after polishing the first film, patterning the first film using the first resist pattern as a mask to form a first pattern, and forming a sidewall film at side surfaces of the first pattern.
Claims6
A method for manufacturing a semiconductor device, comprising:
- forming, on a substrate, an element isolation insulating film which includes a protruding portion protruding above a level of a surface of the substrate;
- forming a first film on the substrate and on the element isolation insulating film;
- polishing the first film to expose the protruding portion;
- forming a first resist pattern which straddles the first film and the protruding portion after polishing the first film;
- patterning the first film using the first resist pattern as a mask to form a first pattern;
- and
- forming a sidewall film at side surfaces of the first pattern.
Dependencies are inferred from the claim text.