US 9,177,796 B2 · Optically tuned hardmask for multi-patterning applications

Abstract

The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.

Claims12

Dependent claims

A method for forming a hardmask on a film stack, comprising:

sputtering a material comprising silicon from a target disposed in a chamber onto a surface of a substrate;
and
delivering a flow of a process gas while sputtering the material from the target, wherein the process gas comprises oxygen, hydrogen, and nitrogen, and
wherein a ratio of oxygen to nitrogen in the process gas is adjusted so that an optical property of the sputtered material has a substantially similar value as the optical property of a photo-resist layer, which is to be disposed on a surface of the sputtered material, at an intended lithography exposure wavelength.

1 more element

A method for forming a hardmask on a film stack, comprising:

sputtering a material comprising silicon from a target disposed in a chamber onto a surface of a substrate;
delivering a flow of a process gas while sputtering the material from the target, wherein the process gas comprises oxygen and nitrogen, and wherein a ratio of oxygen to nitrogen in the process gas is adjusted so that an optical property of the sputtered material has a substantially similar value as the optical property of a photo-resist layer, which is to be disposed on a surface of the sputtered material, at an intended lithography exposure wavelength;
and
depositing the photo-resist layer directly on the surface of the sputtered material.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

14/269,010Filed 2 May 2014 · us provisional application

Priority

3 May 2013

Published

US 2014/0327117 A16 Nov 2014

Granted

3 Nov 2015

Term ends

Not estimatedThe source records don’t support an estimate.

Classification17 codes

H10P 76/4085
Characterised by their sizes, orientations, dispositions, behaviours or shapes: characterised by the processes involved to create the masks
C23C 14/0042
Reactive sputtering: controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
C23C 14/06
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material: characterised by the coating material
C23C 14/14
Characterised by the coating material: metallic material, boron or silicon

Optically tuned hardmask for multi-patterning applications

Life of this patent

Optically tuned hardmask for multi-patterning applications

Life of this patent

Abstract

Claims12