Methods of fabricating a semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsHyongsoo Kim, Joon Kim, WonSeok Yoo
Life of this patent
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Abstract
A method of fabricating a semiconductor device includes forming an etch-target layer on a substrate having an alignment key, forming a transparent first pattern on the etch-target layer to face the alignment key, forming an opaque second pattern on the etch-target layer to be adjacent to the first pattern, and etching the etch-target layer using the first pattern and the second pattern as an etch mask.
Claims19
A method of fabricating a semiconductor device, the method comprising:
- forming an etch-target layer on a substrate having an alignment key;
- forming a transparent first pattern on the etch-target layer to face the alignment key, including:
- forming a mask layer containing an amorphous silicon layer, on the etch-target layer, and
- thermally treating a portion of the mask layer facing the alignment key to transform a portion of the amorphous silicon layer to a polysilicon layer;
- forming an opaque second pattern on the etch-target layer to be adjacent to the first pattern;
- and
- etching the etch-target layer using the first pattern and the second pattern as an etch mask.
A method of fabricating a semiconductor device, the method comprising:
- forming an etch-target layer on a substrate including a first region provided with an alignment key and a second region to be provided with a semiconductor device;
- forming a mask pattern including a transparent first pattern and a second pattern, the transparent first pattern covering a portion of the etch-target layer facing the alignment key and a second pattern being used to form the semiconductor device;
- etching the etch-target layer using the mask pattern as an etch mask to form a hole exposing a top surface of the substrate;
- and
- removing the mask pattern.
A method of forming an etching mask, the method comprising:
- forming an amorphous silicon layer on a substrate having an alignment key;
- thermally treating the amorphous silicon layer to transform the amorphous silicon layer into a transparent polysilicon layer such that the alignment key becomes visible through the polysilicon layer;
- patterning to form a first pattern from the polysilicon layer, the first pattern facing the alignment key;
- and
- forming a second pattern of amorphous silicon, the second pattern being adjacent to first pattern.
Dependencies are inferred from the claim text.