Systems and methods for forming semiconductor devices
AssigneeIntermolecular, Inc.
InventorKhaled Ahmed
Life of this patent
Estimating the term…
Abstract
Embodiments provided herein describe systems and methods for forming semiconductor devices. A semiconductor substrate is provided. The semiconductor substrate is exposed to bromine radicals, hydrogen radicals, or a combination thereof. An oxide layer is formed above the semiconductor substrate. The semiconductor substrate is held within a controlled atmosphere at least from the completion of the exposing of the semiconductor substrate to bromine radicals, hydrogen radicals, or a combination thereof and the beginning of the forming of the oxide layer.
Claims15
A method for forming a semiconductor device, the method comprising:
- providing a semiconductor substrate;
- exposing the semiconductor substrate to bromine radicals;
- and
- forming an oxide layer above the semiconductor substrate after the exposing of the semiconductor substrate to the bromine radicals,
- wherein the semiconductor substrate is held within a controlled atmosphere at least from the completion of the exposing and the beginning of the forming of the oxide layer.
A method for forming a semiconductor device, the method comprising:
- providing a semiconductor substrate comprising a doped region;
- exposing the doped region of the semiconductor substrate to bromine radicals, hydrogen radicals, or a combination thereof;
- and
- forming an oxide layer directly on the doped region of the semiconductor substrate after the exposing of the doped region to the bromine radicals, hydrogen radicals, or a combination thereof, wherein the oxide layer comprises indium-gallium-zinc oxide, cadmium-zinc oxide, germanium-zinc oxide, or a combination thereof, and wherein the semiconductor substrate is held within a controlled atmosphere at least from the completion of the exposing and the beginning of the forming of the oxide layer;
- forming a titanium-containing layer directly on the oxide layer, wherein the titanium-containing layer comprises titanium sulfide, titanium selenide, or a combination thereof;
- forming a dielectric layer directly on the titanium-containing layer, wherein the dielectric layer comprises titanium nitride;
- and
- forming a metallic contact above the dielectric layer.
A method for forming a semiconductor device, the method comprising:
- providing a semiconductor substrate, wherein the semiconductor substrate comprises germanium, gallium arsenide, or a combination thereof and has source and drain regions formed within;
- exposing the semiconductor substrate to bromine radicals, hydrogen radicals, or a combination thereof;
- and
- forming an oxide layer directly on the semiconductor substrate between the source and drain regions after the exposing of the semiconductor substrate to the bromine radicals, wherein the forming of the oxide layer comprises:
- exposing the semiconductor substrate to an oxidant, wherein the oxidant comprises water vapor, hydrogen peroxide gas, ozone gas, or a combination thereof;
- and
- exposing the semiconductor substrate to an aluminum precursor only after the exposing of the substrate to the oxidant,
- wherein the semiconductor substrate is held within a controlled atmosphere at least from the completion of the exposing and the beginning of the forming of the oxide layer;
- forming a high-k dielectric layer directly on the oxide layer, wherein the oxide layer and the high-k dielectric layer jointly form a gate dielectric layer;
- and
- forming a gate electrode directly on the gate dielectric layer, wherein the gate electrode comprises titanium nitride.
Dependencies are inferred from the claim text.