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US 9,177,789 B2Granted
Semiconductor process
AssigneeUnited Microelectronics Corp.
InventorsChih-Chun Wang, Chun-Feng Chen
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Abstract
A semiconductor process of the present invention is described as follows. A substrate is provided, and a material layer is deposited on the substrate using an organic precursor as a reactant gas. A plasma treatment is conducted immediately after depositing the material layer, wherein plasma is continuously supplied during depositing the material layer and the plasma treatment. A pump-down step is conducted.
Claims10
A semiconductor process, comprising the following steps in the sequence set forth:
- providing a substrate in a chamber;
- introducing an organic precursor and a reactant gas into the chamber;
- depositing a material layer on the substrate in a presence of plasma;
- turning off the organic precursor and continuing to supply the plasma during a plasma treatment after the material layer is formed;
- and
- conducting a pump-down step.
3 more elements
Dependencies are inferred from the claim text.