Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device, comprising forming a thin film on a substrate by performing a cycle a predetermined number of times, the cycle including:

• supplying a source gas to the substrate;
• and
• supplying, to the substrate, excited species from each of a plurality of excitation units provided at a side of the substrate, the excited species being generated by plasma-exciting a reaction gas in each of the plurality of excitation units,
• wherein in supplying the excited species from each of the plurality of excitation units, an in-plane distribution of the excited species supplied from at least one of the plurality of excitation units in the substrate differs from an in-plane distribution of the excited species supplied from another excitation unit, other than the at least one excitation unit, among the plurality of excitation units, in the substrate, and
• wherein in supplying the excited species from each of the plurality of excitation units, a type of the reaction gas supplied to the at least one excitation unit differs from a type of the reaction gas supplied to the another excitation unit.