Plasma CVD apparatus, method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
Estimating the term…
Abstract
A structure of a plasma CVD apparatus for forming a dense semiconductor film is provided. Further, a technique for forming a dense crystalline semiconductor film (e.g., a microcrystalline semiconductor film) without a cavity between crystal grains is provided. An electrode supplied with electric power for generating plasma is included in a reaction chamber of the plasma CVD apparatus. This electrode has a common plane on a surface opposite to a substrate, and the common plane is provided with depressed openings. Gas supply ports are provided on the bottom of the depressed openings or on the common plane of the electrode. The depressed openings are provided in isolation from one another.
Claims20
A plasma CVD apparatus comprising,
- a first electrode provided with a plurality of depressed openings, each depressed opening provided between projected portions of the first electrode and supplied with power;
- and
- a second electrode opposite to the first electrode for placing a substrate and grounded,
- wherein glow discharge plasma is generated between the first electrode and the second electrode by being supplied with the power,
- wherein a gas supply port having a hollow opening is provided in each valley portion of the plurality of depressed openings, and
- wherein the plurality of depressed openings each have a tapered shape and are chamfered or roundly chamfered.
A plasma CVD apparatus comprising,
- a first electrode provided with a plurality of depressed openings, each depressed opening provided between projected portions of the first electrode and supplied with power;
- and
- a second electrode opposite to the first electrode for placing a substrate and grounded,
- wherein glow discharge plasma is generated between the first electrode and the second electrode by being supplied with the power,
- wherein a gas supply port having a hollow opening is provided in each of the projected portions, and
- wherein the plurality of depressed openings each have a tapered shape and are chamfered or roundly chamfered.
A method for manufacturing a microcrystalline semiconductor film comprising the steps of:
- introducing a reactive gas into a reaction chamber through a gas supply port of a first electrode;
- setting a pressure of the reaction chamber to greater than or equal to 450 Pa and less than or equal to 13332 Pa;
- forming a plasma region between the first electrode and a second electrode by supplying power to the first electrode;
- forming crystalline deposition precursors having crystallinity in a gas phase including the plasma region;
- forming a crystal nucleus of greater than or equal to 5 nm and less than or equal to 15 nm by depositing the deposition precursors over a substrate;
- and
- forming the microcrystalline semiconductor film by growing a crystal from the crystal nucleus,
- wherein the first electrode has a common plane opposite to the second electrode and is provided with a plurality of depressed openings, and
- wherein a distance between the first electrode and the second electrode is greater than or equal to 4 mm and less than or equal to 16 mm.
Dependencies are inferred from the claim text.