Ion source device and method for providing ion source
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorsLulei Wu, Leon Shan, Chunrong Dong
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Abstract
Various embodiments provide an ion source device and a method for providing the ion source. An exemplary ion source device can include an arc chamber, a filament, a reflector, a slit outlet, a source gas inlet, and/or a cleaning gas inlet. The filament can be configured to generate thermo-electrons in the arc chamber. The reflector can be configured to reflect the thermo-electrons back to the arc chamber. The slit outlet can be configured to exit a gaseous material out of the arc chamber. The source gas inlet and the cleaning gas inlet can be located on a same sidewall of the arc chamber configured to respectively introduce an ion source gas and an inert cleaning gas into the arc chamber.
Claims9
A method of providing an ion source for an ion implantation, comprising:
- connecting a filament to a power supply to generate thermo-electrons in an arc chamber;
- introducing an inert cleaning gas into the arc chamber through a cleaning gas inlet configured in a sidewall different from a sidewall configured with the filament, such that the thermo-electrons ionize at least a portion of the inert cleaning gas into a first plasma, wherein the first plasma, a remaining portion of the inert cleaning gas, or a combination thereof form a separation layer near an inner surface of the arc chamber;
- introducing an ion source gas into the arc chamber through a source gas inlet, such that the thermo-electrons ionize the ion source gas into a second plasma and the second plasma is separated from the inner surface of the arc chamber by the separation layer;
- and
- extracting the second plasma out of the arc chamber to provide an ion beam.
Dependencies are inferred from the claim text.