Carbon nanotube-graphene hybrid transparent conductor and field effect transistor

A method for forming a cleaned nanotube-graphene hybrid film, comprising:

• depositing nanotube film over a substrate to produce a uniform layer of nanotube film;
• removing impurities from a surface of the uniform layer of nanotube film not contacting the substrate to produce a cleaned uniform layer of nanotube film, wherein said removing impurities from the surface of the uniform layer of nanotube film comprises:
• applying an acid treatment to the layer of nanotube film and rinsing the uniform layer of nanotube film subsequent to applying the acid treatment;
• and
• annealing the uniform layer of nanotube film, wherein said annealing comprises heating the substrate and the uniform layer of nanotube film deposited thereon in a vacuum to a temperature between approximately 80 degrees Celsius and approximately 120 degrees Celsius;
• depositing a layer of graphene over the cleaned uniform layer of nanotube film to produce a nanotube-graphene hybrid film;
• and
• removing impurities from a surface of the nanotube-graphene hybrid film to produce a cleaned nanotube-graphene hybrid film, wherein the hybrid film has improved electrical performance via decreasing nanotube resistance by increasing contact area through use of graphene as a bridge;
• repeating the steps of (i) producing a uniform layer of nanotube film, (ii) producing a cleaned layer of nanotube film, (iii) producing a nanotube-graphene hybrid film, and (iv) producing a cleaned nanotube-graphene hybrid film to form a cleaned nanotube-graphene hybrid film of a desired thickness;
• and
• chemically doping the cleaned nanotube-graphene hybrid film.