Pre-reading method and programming method for 3D NAND flash memory
AssigneeMacronix Internaitonal Co., Ltd.
InventorsWen-Wei Yeh, Chih-Shen Chang, Kuo-Pin Chang
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Abstract
A pre-reading method and a programming method for a 3D NAND flash memory are provided. The pre-reading method comprises the following steps. A selected string includes a first memory cell, two second memory cells and a plurality of third memory cells. The two second memory cells are adjacent to the first memory cell. The third memory cells are not adjacent to the first memory cell. A first pass voltage is applied on the second memory cells, a second pass voltage is applied on the third memory cells, and a read voltage is applied on the first memory cell via a plurality of word lines for reading a data of the first memory cell. The first pass voltage is larger than the second pass voltage.
Claims18
A pre-reading method for a 3D NAND flash memory, comprising:
- applying a first select voltage on one of a plurality of bit lines for selecting one of a plurality of layers;
- applying a second select voltage on one of a plurality of string select lines for selecting one of a plurality of strings of the selected layer, wherein the selected string includes a first memory cell, two second memory cells and a plurality of third memory cells, the two second memory cells are adjacent to the first memory cell, and the third memory cells are not adjacent to the first memory cell;
- and
- applying a first pass voltage on the second memory cells, applying a second pass voltage on the third memory cells, and applying a read voltage on the first memory cell via a plurality of word lines for reading a data of the first memory cell, wherein the first pass voltage is larger than the second pass voltage.
A programming method for a 3D NAND flash memory, comprising:
- applying a first select voltage on one of a plurality of bit lines for selecting one of a plurality of layers;
- applying a second select voltage on one of a plurality of string select lines for selecting one of a plurality of strings of the selected layer, wherein the selected string includes a first memory cell, two second memory cells and a plurality of third memory cells, the second memory cells are adjacent to the first memory cell, and the third memory cells are not adjacent to the first memory cell;
- applying a first pass voltage on the second memory cells, applying a second pass voltage on the third memory cells, and applying a read voltage on the first memory cell via a plurality of word lines for reading a data of the first memory cell, wherein the first pass voltage is larger than the second pass voltage;
- and
- programming the first memory cell.
Dependencies are inferred from the claim text.