Determining and using soft data in memory devices and systems
AssigneeMicron Technology, Inc.
InventorsWilliam H. Radke, Zhenlei Shen, Peter Feeley
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Abstract
The present disclosure includes methods, devices, and systems for determining and using soft data in memory devices and systems. One or more embodiments include an array of memory cells and control circuitry coupled to the array. The control circuitry is configured to perform a number of sense operations on the memory cells using a number of sensing voltages to determine soft data associated with a target state of the memory cells, and adjust a sensing voltage used to determine the target state based, at least partially, on the determined soft data.
Claims20
A memory device, comprising:
- a number of memory cells;
- and
- control circuitry coupled to the memory cells and configured to:
- in response to a failure of an error correction operation performed on data associated with a determined state of the memory cells, perform a sense operation on the memory cells using a sensing voltage to determine soft data associated with a target state of the memory cells;
- perform an error correction operation on the soft data;
- and
- adjust a sensing voltage used to determine the target state if the error correction operation does not result in a failure.
A method for operating a memory device, comprising:
- in response to a failure of an error correction operation performed on data associated with a determined state of a number of memory cells, performing a sense operation on the memory cells to determine soft data associated with a target state of the memory cells;
- performing an error correction operation on the soft data;
- and
- adjusting a sensing voltage used to determine the target state to a sensing voltage used to perform the sense operation if the error correction operation does not result in a failure.
A memory device, comprising:
- a number of memory cells;
- and
- control circuitry coupled to the memory cells and configured to:
- in response to a failure of an error correction operation performed on data associated with a determined state of the memory cells, perform a number of sense operations on the memory cells using a number of sensing voltages to determine soft data associated with a target state the memory cells;
- perform an error correction operation on the soft data;
- and
- adjust a sensing voltage used to determine the target state based, at least partially, on a result of the error correction operation.
A method for operating a memory device, comprising:
- in response to a failure of an error correction operation performed on data associated with a determined state of a number of memory cells, performing a number of sense operations on the memory cells to determine soft data associated with a target state of the memory cells, wherein each of the number of sense operations are performed using a different sensing voltage;
- performing an error correction operation on the soft data;
- and
- adjusting a sensing voltage used to determine the target state based, at least partially, on a result of the error correction operation.
Dependencies are inferred from the claim text.