Method and system for programming non-volatile memory cells based on programming of proximate memory cells
AssigneeMicron Technology, Inc.
InventorAmin Khaef
Life of this patent
Estimating the term…
Abstract
A multi-level non-volatile memory device programs cells in each row in a manner that takes into account the coupling from the programming of cells that are proximate the row to be programmed. In one example of the invention, after the row has been programmed, the proximate cells are verified by read, comparison, and, if necessary, reprogramming operations to compensate for charge added to proximate memory cells resulting from programming the row. In another example of the invention, a row of memory cells is programmed with charge levels that take into account the charge that will be added to the memory cells when proximate memory cells are subsequently programmed.
Claims19
A method, comprising:
- determining first cells of a subset of cells to be programmed to a first threshold level;
- programming the first cells of the subset of cells to the first threshold level;
- determining second cells of the subset of cells to be programmed to a second threshold level, the second cells different from the first cells of the subset of cells and wherein the first threshold level is for a state and the second threshold level is a different threshold level for the same state;
- and
- programming the second cells of the subset of cells to the second threshold voltage.
A method, comprising:
- programming first cells of a page of cells to a first threshold voltages for a state;
- and
- programming second cells of the page of cells to a second threshold voltage for the same state, wherein the first and second cells are different and wherein the first and second threshold voltages are different.
An apparatus, comprising:
- a subset selection unit configured to select cells of a subset of cells to be programmed to a current specific threshold voltage of a plurality of specific threshold voltages and, wherein more than one specific threshold voltage of the plurality of specific threshold voltages is designated per state;
- and
- a control logic unit coupled to the subset selection unit, the control logic unit configured to cause the selected cells of the subset of cells to be programmed to the current specific threshold voltage of the plurality of specific threshold voltages and further configured to inhibit programming of unselected cells of the subset of cells during the programming of the selected cells of the subset of cells.
Dependencies are inferred from the claim text.