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US 9,177,651 B2Granted
Programming methods and memories
AssigneeMicron Technology, Inc.
InventorsVishal Sarin, William H. Radke, Frankie F. Roohparvar
Life of this patent
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Abstract
Methods of programming a memory and memories are disclosed. In at least one embodiment, a memory is programmed by determining a pretarget threshold voltage for a selected cell, wherein the pretarget threshold voltage is determined using pretarget threshold voltage values for at least one neighbor cell of the selected cell.
Claims19
A method of programming a memory, comprising:
- determining a pretarget threshold voltage for a selected cell, wherein the pretarget threshold voltage is determined using a pretarget threshold voltage value for at least one neighbor cell of the selected cell;
- wherein the at least one neighbor cell of the selected cell is preprogrammed to the pretarget threshold voltage value for the at least one neighbor cell of the selected cell and is subsequently programmed to a target threshold voltage value for the at least one neighbor cell of the selected cell.
A memory device, comprising:
- an array of memory cells;
- and
- a controller configured to perform a method comprising:
- determining a pretarget threshold voltage for a selected cell, wherein the pretarget threshold voltage is determined using a pretarget threshold voltage value for at least one neighbor cell of the selected cell;
- wherein the at least one neighbor cell of the selected cell is preprogrammed to the pretarget threshold voltage value for the at least one neighbor cell of the selected cell and is subsequently programmed to a target threshold voltage value for the at least one neighbor cell of the selected cell.
2 more elements
A method of programming a memory, comprising:
- determining a pretarget threshold voltage for a selected cell, wherein the pretarget threshold voltage is determined using a pretarget threshold voltage value for at least one neighbor cell of the selected cell, wherein the at least one neighbor cell of the selected cell is preprogrammed to the pretarget threshold voltage value for the at least one neighbor cell of the selected cell and is subsequently programmed to a target threshold voltage value for the at least one neighbor cell of the selected cell;
- and
- determining an amount of floating gate coupling the selected cell will have due to subsequent programming of the at least one neighbor cell of the selected cell.
Dependencies are inferred from the claim text.