Phase-change memory device and method for multi-level programming of phase-change memory device
AssigneeIntellectual Discovery Co., Ltd.
InventorDeok Kee Kim
Life of this patent
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Abstract
A method for multi-level programming of a phase change memory device includes selecting a word line from multiple word lines and applying multiple bits of data to a bit line of a cell connected to the selected word line. According to the type of data, the method applies a program current to the selected word line or a multi-level program current to word lines adjacent to the selected word line.
Claims6
A multi-level programming method of a phase-change memory device, the multi-level programming method comprising:
- selecting a word line, where data are to be input, from multiple word lines;
- applying multiple bits of data to a bit line of a cell connected to the selected word line;
- applying a program current to the selected word line for programming of first data;
- applying a program current to the selected word line and applying a multi-level program current lower than the program current to one of word lines adjacent to the selected word line for programming of second data;
- and
- applying a program current to the selected word line and applying a multi-level program current lower than the program current to two of the word lines adjacent to the selected word line for programming of third data,
- wherein an ambient temperature of the cell is increased by the multi-level program current and a program volume of a phase-change material layer of the cell is reduced as the ambient temperature is increased, such that a program state of the cell is classified based on the program volume of the phase-change material layer of the cell.
A multi-level programming method of a phase-change memory device, the multi-level programming method comprising:
- selecting a word line, where data are to be input, from multiple word lines;
- applying multiple bits of data to a bit line of a cell connected to the selected word line;
- applying a program current to the selected word line for programming of first data;
- applying a program current to the selected word line and applying a multi-level program current lower than the program current to one of bit lines adjacent to the bit line for programming of second data;
- and
- applying a program current to the selected word line and applying a multi-level program current lower than the program current to two of the bit lines adjacent to the bit line for programming of third data,
- wherein an ambient temperature of the cell is increased by the multi-level program current and a program volume of a phase-change material layer of the cell is reduced as the ambient temperature is increased, such that a program state of the cell is classified based on the program volume of the phase-change material layer of the cell.
A multi-level programming method of a phase-change memory device that includes, between word lines, a heater line extending in parallel with the word lines, the multi-level programming method comprising:
- selecting a word line, where data are to be input, from multiple word lines;
- applying multiple bits of data to a bit line of a cell connected to the selected word line;
- applying a program current to the selected word line for programming of first data;
- applying a program current to the selected word line and applying a multi-level program current to one of heater lines adjacent to the selected word line for programming of second data;
- and
- applying a program current to the selected word line and applying a multi-level program current to two of the heater lines adjacent to the selected word line for programming of third data,
- wherein an ambient temperature of the cell is increased by the multi-level program current and a program volume of a phase-change material layer of the cell is reduced as the ambient temperature is increased, such that a program state of the cell is classified based on the program volume of the phase-change material layer of the cell.
Dependencies are inferred from the claim text.