Crossbar RRAM array radiation hardened application

A method of programming a memory device, comprising:

• providing a plurality of resistive switching device, each of the plurality of resistive switching device comprising a resistive switching material characterized by a state depending on a conductive filament structure in a portion of each of the plurality of resistive switching material;
• providing a first programming code file for a system, the first programming code file determining the state of each of plurality of resistive switching device, and the system being configured to receive the first programming code file;
• maintaining programmability of each of the plurality of resistive switching device;
• receiving the first programming code file by the system;
• executing the first programming code file by the system;
• verifying and validating the first programming code file by the system;
• applying joule heating programming to the plurality of resistive switching device to cause the conductive filament in one or more resistive switching device to be fixed spatially in a portion of the resistive switching material of the respective one or more resistive switching device after verifying and validating;
• and
• removing programmability of each of the plurality of resistive switching device.