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US 9,177,613 B2Granted
Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsWookhyoung Lee, Jongsik Chun, Sunil Shim, Jaeyoung Ahn, Juyul Lee, Kihyun Hwang, Hansoo Kim, Woonkyung Lee, Jaehoon Jang, Wonseok Cho
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Abstract
Provided is a semiconductor device including gate structures provided on a substrate, a separation insulating layer interposed between the gate structures, and a plurality of cell pillars connected to the substrate through each gate structure. Each gate structure may include horizontal electrodes vertically stacked on the substrate, and an interval between adjacent ones of the cell pillars is non-uniform.
Claims20
A semiconductor memory device comprising:
- a plurality of horizontal electrodes;
- a plurality of insulating patterns alternatingly stacked with the plurality of horizontal electrodes;
- and
- an array of pillars formed in the plurality of insulating patterns and the plurality of horizontal electrodes, the array of pillars comprising:
- a first group of pillars disposed along a first direction;
- and
- a second group of pillars disposed along a second direction parallel to the first direction, and staggered with respect to the first group of pillars,
- wherein a first pillar of the first group of pillars is disposed to one side of a second pillar of the first group of pillars and a third pillar of the first group of pillars is disposed to another side of the second pillar of the first group of pillars, and
- wherein the second pillar of the first group of pillars is closer to the third pillar of the first group of pillars than to the first pillar of the first group of pillars.
6 more elements
Dependencies are inferred from the claim text.