US 9,177,574 B2 · Magneto-resistance effect device with mixed oxide function layer

Abstract

According to one embodiment, a magneto-resistance effect device includes: a multilayer structure having a cap layer; a magnetization pinned layer; a magnetization free layer provided between the cap layer and the magnetization pinned layer; a spacer layer provided between the magnetization pinned layer and the magnetization free layer; a function layer which is provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer, the function layer having oxide containing at least one element selected from Zn, In, Sn and Cd, and at least one element selected from Fe, Co and Ni; and a pair of electrodes for applying a current perpendicularly to a film plane of the multilayer structure.

Claims8

Dependent claims

A magneto-resistance effect device comprising:

a multilayer structure comprising:
a first magnetic layer;
a second magnetic layer having a magnetization which is changeable;
a spacer layer provided between the first magnetic layer and the second magnetic layer;
a function layer formed inside the second magnetic layer, the function layer being a uniform oxide layer having mixed oxide containing Cd and at least one element selected from Fe, Co and Ni, wherein resistivity of the function layer is not higher than 5×104 μΩcm;
and
a pair of electrodes applying a current perpendicular to a film plane of the multilayer structure.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

14/469,484Filed 26 Aug 2014 · division

Priority

27 Nov 2009

Published

US 2014/0009854 A111 Dec 2014

Granted

3 Nov 2015

Term ends

Not estimatedThe source records don’t support an estimate.

Classification19 codes

G11B 5/39
Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only:…
B82Y 25/00
Nanomagnetism
G01R 33/093
Magnetoresistive devices: using multilayer structures, e.g. giant magnetoresistance sensors
G11B 5/3903
Using magneto-resistive devices or effects: using magnetic thin film layers or their effects, the films being part of integrated structures

Family

PCT/JP2009/006442Parent of this continuation · filed 27 Nov 2009

Application13/481,317Parent of this division · filed 25 May 2012

Application14/025,194Parent of this division · filed 12 Sep 2013

US 2014/0362477 A1Pre-grant publication · published 11 Dec 2014

Application13/481,317Parent of this continuation

US 2012/0229936 A1Published application

US 2014/0009854 A1Published application

US 9,177,574 B2This patent

From the US filing history. Foreign family members aren’t listed.

Magneto-resistance effect device with mixed oxide function layer

Life of this patent

Magneto-resistance effect device with mixed oxide function layer

Life of this patent

Abstract

Claims8