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US 9,177,182 B2Granted
Semiconductor device for wireless communication
AssigneeRenesas Electronics Corporation
InventorYuichi Okuda
Life of this patent
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Abstract
Provided is a semiconductor device for wireless communication which achieves a reduction in leakage power and allows an improvement in power efficiency. For example, to external terminals, an antenna driver section for driving an antenna and a rectifying section for rectifying input power from the antenna are coupled. The antenna driver section includes pull-up PMOS transistors and pull-down NMOS transistors. In the rectifying section, a power supply voltage generated by a full-wave rectifying circuit is boosted by a voltage boosting circuit. For example, when a supply of a power supply voltage from a battery is stopped, a power supply voltage resulting from the boosting by the voltage boosting circuit is supplied to the bulk of each of the pull-up PMOS transistors.
Claims17
A semiconductor device for wireless communication, comprising:
- a first terminal serving as an antenna coupling terminal to couple with an antenna and input with an alternating current signal via the antenna;
- a p-channel first MISFET having a source-drain path coupled between the first terminal and a first power supply voltage terminal to drive the antenna;
- an n-channel second MISFET having a source-drain path coupled between the first terminal and a second power supply voltage terminal to drive the antenna;
- and
- a rectifying circuit section coupled to the first terminal and the p-channel first MISFET,
- wherein the rectifying circuit section includes:
- a first rectifying circuit which receives the alternating current signal input thereto to perform a rectifying operation via a first element having a diode function;
- a first capacitor coupled between an output node of the first rectifying circuit and a ground power supply voltage;
- a second capacitor having a first terminal to which the alternating current signal is input;
- a second rectifying circuit which receives a signal from a second terminal of the second capacitor input thereto to perform a rectifying operation via a second element having a diode function;
- and
- a third capacitor coupled between an output node of the second rectifying circuit and the output node of the first rectifying circuit,
- wherein the rectifying circuit section uses the alternating current signal input to the first terminal via the antenna to generate a third power supply voltage having a value higher than that of a first power supply voltage at the first power supply voltage terminal and higher than a voltage occurring at the first terminal when the alternating current signal has a maximum amplitude,
- wherein the third power supply voltage is applied as a bulk voltage of the first MISFET,
- wherein the third power supply voltage is generated from the output node of the second rectifying circuit, and
- wherein a fourth power supply voltage is generated from the output node of the first rectifying circuit.
13 more elements
A semiconductor device for wireless communication comprising:
- a first terminal serving as an antenna coupling terminal to couple with an antenna and input with an alternating current signal via the antenna;
- a p-channel first MISFET having a source-drain path coupled between the first terminal and a first power supply voltage terminal to drive the antenna;
- an n-channel second MISFET having a source-drain path coupled between the first terminal and a second power supply voltage terminal to drive the antenna;
- a rectifying circuit section coupled to the first terminal and the p-channel first MISFET;
- a first feedback path provided between the first terminal and a gate electrode of the first MISFET to retard a shift of a gate voltage of the first MISFET using a resistive component and a capacitive component;
- and
- a second feedback path provided between the first terminal and a gate electrode of the second MISFET to retard a shift of a gate voltage of the second MISFET using a resistive component and a capacitive component,
- wherein the rectifying circuit uses the alternating current signal input to the first terminal via the antenna to generate a third power supply voltage having a value higher than that of a first power supply voltage at the first power supply voltage terminal and higher than a voltage occurring at the first terminal when the alternating current signal has a maximum amplitude,
- wherein the third power supply voltage is applied as a bulk voltage of the first MISFET,
- wherein the first feedback path includes a first coupling switch for controlling conduction/non-conduction between the first terminal and the gate electrode of the first MISFET, and
- wherein the second feedback path includes a second coupling switch for controlling conduction/non-conduction between the first terminal and the gate electrode of the second MISFET.
8 more elements
A semiconductor device for wireless communication, comprising:
- a first terminal to which an alternating current signal input via an antenna is transmitted;
- a rectifying circuit section coupled to the first terminal to rectify the alternating current signal and thereby generate a second power supply voltage;
- a regulator circuit which generates a third power supply voltage having a predetermined value from the second power supply voltage;
- a second terminal serving as a terminal for supplying a direct current voltage to an external circuit;
- a p-channel first MISFET having a source-drain path coupled between a first power supply voltage terminal and the second terminal;
- a p-channel second MISFET having a source-drain path coupled between the third power supply voltage and the second terminal;
- and
- a switch circuit which selects a first power supply voltage from the first power supply voltage terminal in a first mode or selects the third power supply voltage in a second mode and outputs the selected power supply voltage as a fourth power supply voltage,
- wherein the fourth power supply voltage is supplied to a bulk of each of the first MISFET and second MISFET, and
- wherein when the third power supply voltage is selected, the third power supply voltage is higher than the first power supply voltage and higher than the second power supply voltage.
7 more elements
Dependencies are inferred from the claim text.