US 9,176,514 B2Granted

Reference voltage generator circuits and integrated circuits having the same reference voltage generator circuits

AssigneeiWatt Integrated Circuits Technology (Tianjin) Limited

InventorsWeihai Huang, Honglai Wang

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Abstract

Various embodiments of the present invention relate to a reference voltage generator circuit. Specifically, the circuit may for example comprise: a mirror constant current source having a first branch and a second branch, wherein a first current on the first branch is proportional to a second current on the second branch; wherein the first branch has a first resistive element, and the second branch has two second resistive elements connected in series; and a power supply terminal located between said two second resistive elements on the second branch. A high-precision reference voltage relative to the voltage source can be provided at the power supply terminal by using the circuit provided by various embodiments of the present invention.

Claims14

Dependent claims

A reference voltage generator circuit, comprising:

a mirror constant current source having a first branch and a second branch, wherein a first current on the first branch is proportional to a second current on the second branch;
wherein the first branch has a first resistive element, and the second branch has two second resistive elements connected in series;
and
a power supply terminal located between said two second resistive elements on the second branch;
wherein the first branch has a first NPN bipolar transistor thereon, the second branch has a second NPN bipolar transistor thereon, the first NPN bipolar transistor and the second NPN bipolar transistor match each other, wherein a voltage between a base and an emitter is Vbe;
wherein a base of the first NPN bipolar transistor is connected to a base of the second NPN bipolar transistor and connected to its own collector;
wherein an emitter of the first NPN bipolar transistor is connected to an emitter of the second NPN bipolar transistor;
wherein a collector of the first NPN bipolar transistor is connected to a high-accuracy reference voltage VR via the first resistive element;
wherein a collector of the second NPN bipolar transistor is connected to a voltage source VDDH via the two second resistive elements;
wherein at least one of the following is included between the two second resistive elements and the voltage source VDDH:
a third NPN bipolar transistor matchable with the first NPN bipolar transistor or the second NPN bipolar transistor, wherein a voltage between a base and an emitter is Vbe, its base and collector are connected to the voltage source VDDH, its emitter is connected to the two second resistive elements;
and
a diode matchable with the first NPN bipolar transistor or the second NPN bipolar transistor, wherein a voltage between a positive pole and a negative pole is Vd, its positive pole is connected to the voltage source VDDH, and its negative pole is connected to the two second resistive elements.

10 more elements

A reference voltage generator circuit, comprising:

a mirror constant current source having a first branch and a second branch, wherein a first current on the first branch is proportional to a second current on the second branch;
wherein the first branch has a first resistive element, and the second branch has two second resistive elements connected in series;
and
a power supply terminal located between said two second resistive elements on the second branch;
wherein the first branch has a first N-MOS transistor thereon, the second branch has a second N-MOS transistor thereon, and the first N-MOS transistor and the second N-MOS transistor match each other, wherein a voltage between a gate and a source is Vgs;
wherein a gate of the first N-MOS transistor is connected to a gate of the second N-MOS transistor and connected to its own drain;
wherein a source of the first N-MOS transistor is connected to a source of the second N-MOS transistor;
wherein a drain of the first N-MOS transistor is connected to a high-accuracy reference voltage VR via the first resistive element;
wherein a drain of the second N-MOS transistor is connected to a voltage source VDDH via the two second resistive elements;
wherein at least one of the following is included between the two second resistive elements and the voltage source VDDH:
a P-MOS transistor matchable with the first N-MOS transistor or the second N-MOS transistor, wherein a voltage between the gate and source is Vgs, its source is connected to the voltage source VDDH, and its gate and drain are connected to the two second resistive elements;
and
a diode matchable with the first N-MOS transistor or the second N-MOS transistor, wherein a voltage between a positive pole and a negative pole is Vd, its positive pole is connected to the voltage source VDDH, and its negative pole is connected to the two second resistive elements.

10 more elements

Dependencies are inferred from the claim text.