US 9,176,400 B2 · System and method for reducing contamination in extreme ultraviolet lithography light source

Abstract

Various embodiments provide systems and methods for extreme ultraviolet (EUV) lithography light source. An exemplary system can include a laser radiation apparatus configured to provide laser radiation. The system can further include an EUV light excitation source material configured to receive the laser radiation to generate an EUV light. The laser radiation can generate droplets from the EUV light excitation source material. The system can further include a collector configured to collect the EUV light. The collector can include a plurality of reflective mirrors surrounding the EUV light excitation source material. The plurality of reflective mirrors can be movable. The collector can further include a mirror control system synchronized with the laser radiation apparatus and configured to set the plurality of reflective mirrors to be in one of a reflective state for reflecting the EUV light and a non-reflective state for preventing contamination by the droplets.

Claims15

Dependent claims

A system for extreme ultraviolet (EUV) lithography light source, comprising:

a pulsed laser radiation apparatus configured to provide laser radiation;
an EUV light excitation source material configured to receive the laser radiation to generate an EUV light, wherein the laser radiation generates droplets from the EUV light excitation source material;
a collector configured to collect the EUV light, comprising:
a plurality of reflective mirrors surrounding the EUV light excitation source material, wherein the plurality of reflective mirrors are movable;
and
a mirror control system synchronized with the pulsed laser radiation apparatus and configured to set the plurality of reflective mirrors to be simultaneously in a reflective state for reflecting the EUV light and configured to set the plurality of reflective mirrors to be simultaneously in a non-reflective state by rotating the plurality of reflective mirrors to be substantially parallel to a corresponding flight direction of droplets for preventing contamination by the droplets.

3 more elements

A system for EUV lithography light source, comprising:

a pulsed high-voltage-discharge apparatus configured to apply a high-voltage discharge;
an EUV light excitation source material configured to receive the high-voltage discharge to generate an EUV light, wherein the high-voltage discharge generates droplets from the EUV light excitation source material;
a collector configured to collect the EUV light, comprising:
a plurality of reflective mirrors surrounding the EUV light excitation source material, wherein the plurality of reflective mirrors are movable;
and
a mirror control system synchronized with the pulsed high-voltage-discharge apparatus and configured to set the plurality of reflective mirrors to be simultaneously in a reflective state for reflecting the EUV light and configured to set the plurality of reflective mirrors to be simultaneously in a non-reflective state by rotating the plurality of reflective mirrors to be substantially parallel to a corresponding flight direction of droplets for preventing contamination by the droplets.

3 more elements

Dependencies are inferred from the claim text.

System and method for reducing contamination in extreme ultraviolet lithography light source

Life of this patent

System and method for reducing contamination in extreme ultraviolet lithography light source

Life of this patent

Abstract

Claims15