Multi-line width pattern created using photolithography
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Liang Tai, Bi-Ming Yen, Chun-Hung Lee, De-Fang Chen
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Abstract
Systems and methods are provided for forming features through photolithography. A polymer layer is formed over a substrate. The polymer layer is patterned to form a first feature and a second feature, the first feature and the second feature being separated at a first distance. A rinse material is applied to the polymer layer including the first feature and the second feature. The rinse material is removed from the polymer layer including the first feature and the second feature to cause the first feature and the second feature to come into contact with each other. A third feature is formed based on the first feature and the second feature being in contact with each other.
Claims19
A method comprising:
- forming a polymer layer over a substrate;
- patterning the polymer layer to form a first feature and a second feature, the first feature and the second feature being separated at a first distance;
- applying a rinse material to the polymer layer including the first feature and the second feature;
- removing the rinse material from the polymer layer including the first feature and the second feature to cause the first feature and the second feature to come into contact with each other;
- and
- forming a third feature based on the first feature and the second feature being in contact with each other,
- wherein the first feature is associated with a first height and a first width, and the second feature is associated with a second height and a second width,
- wherein the forming the third feature based on the first feature and the second feature being in contact with each other comprises etching into the substrate using the first feature and second feature in contact as a mask to form the third feature, the third feature being associated with a third height and a third width,
- wherein the third width is approximately equal to a sum of the first width, the first distance and the second width.
A method comprising:
- forming a photoresist layer over a substrate;
- patterning the photoresist layer to form a first feature and a second feature, the first feature and the second feature being separated at a first distance;
- applying a rinse material to the photoresist layer including the first feature and the second feature;
- removing the rinse material from the photoresist layer including the first feature and the second feature to cause the first feature and the second feature to come into contact with each other;
- and
- forming a third feature based on the first feature and the second feature being in contact with each other,
- wherein the first feature is associated with a first height and a first width, and the second feature is associated with a second height and a second width,
- wherein the forming the third feature based on the first feature and the second feature being in contact with each other includes etching into the substrate using the first feature and second feature in contact as a mask to form the third feature, the third feature being associated with a third height and a third width,
- wherein the third width is approximately equal to a sum of the first width, the first distance and the second width.
A method comprising:
- forming a polymer layer over a substrate;
- patterning the polymer layer to form a first feature and a second feature, the first feature and the second feature being separated at a first distance;
- applying a rinse material to the polymer layer including the first feature and the second feature;
- removing the rinse material from the polymer layer including the first feature and the second feature to cause the first feature and the second feature to come into contact with each other;
- and
- forming a third feature based on the first feature and the second feature being in contact with each other,
- wherein the patterning the polymer layer to form the first feature and the second feature includes:
- patterning the polymer layer to form a fourth feature and a fifth feature, the fourth feature and the fifth feature being separated at a second distance larger than the first distance.
Dependencies are inferred from the claim text.