Substrate processing apparatus and semiconductor device manufacturing method

A substrate processing apparatus comprising:

• a processing chamber in which a substrate is processed;
• a first processing gas supply system that includes a first gas supply hole opened to an inside of the processing chamber and that supplies a first processing gas from the first gas supply hole to the inside of the processing chamber;
• a first buffer chamber that is partitioned from the processing chamber and that includes a second gas supply hole opened to the inside of the processing chamber;
• a second buffer chamber that is partitioned from the processing chamber and that includes a third gas supply hole opened to the inside of the processing chamber, the second gas supply hole and the third gas supply hole being disposed symmetrically with respect to a line passing through a center of the substrate in the processing chamber and the gas supply hole of the first processing gas supply system;
• a second processing gas supply system that supplies a second processing gas to an inside of the first buffer chamber and an inside of the second buffer chamber, the second processing gas being different from the first processing gas;
• a first plasma-generating member that activates the second processing gas in the first buffer chamber via plasma;
• a second plasma-generating member that activates the second processing gas in the second buffer chamber via plasma;
• an exhaust system that exhausts the inside of the processing chamber from an exhaust hole;
• and
• a controller that is configured to control the first processing gas supply system, the second processing gas supply system, the first plasma-generating member, the second plasma-generating member and the exhaust system, so as to form a film on the substrate by performing a cycle at one or more predetermined times, the cycle including a process of supplying the first processing gas to the substrate in the processing chamber from the first gas supply hole of the first processing gas supply system and exhausting the first processing gas from the exhaust hole, and a process of supplying the second processing gas activated via plasma in the first and the second buffer chambers to the substrate in the processing chamber from the second gas supply hole of the first buffer chamber and from the third gas supply hole of the second buffer chamber and exhausting the second processing gas from the exhaust hole,
• wherein the second gas supply hole and the third gas supply hole are disposed at positions that are 180 degrees from each other with a center of the substrate in the processing chamber interposed therebetween, and
• wherein the first gas supply hole is disposed between the third gas supply hole and the exhaust hole.