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US 9,175,389 B2Granted
ALD process window combinatorial screening tool
AssigneeIntermolecular, Inc.
InventorJeremy Cheng
Life of this patent
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Abstract
Systems and apparatus are described that facilitate the evaluation and characterization of ALD processes as a function of process parameters such as temperature, gas flow rate, and pressure. In some embodiments, systems and apparatus are described that allow the ALD process to be characterized at different pressures in a combinatorial manner.
Claims14
A apparatus for use in an Atomic Layer Deposition (ALD) process, the apparatus comprising:
- a precursor inlet manifold;
- a plurality of precursor flow channels coupled to the precursor inlet manifold;
- a reactant inlet manifold;
- a plurality of reactant flow channels coupled to the reactant inlet manifold;
- wherein the plurality of precursor flow channels and the plurality of reactant flow channels are arranged orthogonally to each other;
- wherein each precursor flow channel further comprises a plurality of precursor flow restrictors that are operable to result in a decrease of a pressure along each precursor flow channel;
- and
- wherein each reactant flow channel further comprises a plurality of reactant flow restrictors that are operable to result in a decrease of a pressure along each reactant flow channel.
5 more elements
A method for characterizing an ALD process, the method comprising:
- a. providing an apparatus, the apparatus further comprising:
- a precursor inlet manifold;
- a plurality of precursor flow channels coupled to the precursor inlet manifold;
- a reactant inlet manifold;
- a plurality of reactant flow channels coupled to the reactant inlet manifold;
- wherein the plurality of precursor flow channels and the plurality of reactant flow channels intersect in an orthogonal configuration to form a plurality of process regions;
- wherein each precursor flow channel further comprises a plurality of precursor flow restrictors that are operable to result in a decrease of a pressure along each precursor flow channel;
- and
- wherein each reactant flow channel further comprises a plurality of reactant flow restrictors that are operable to result in a decrease of a pressure along each reactant flow channel;
- b. flowing a precursor into the precursor inlet manifold, wherein the flow is evenly provided to the plurality of precursor flow channels, wherein the precursor adsorbs on a surface of a site-isolated region of a substrate disposed under each process region;
- c. flowing a purge into a precursor inlet manifold, wherein the flow is evenly provided to a plurality of precursor flow channels;
- d. flowing a reactant into the reactant inlet manifold, wherein the flow is evenly provided to the plurality of reactant flow channels, wherein the reactant reacts with the precursor on the surface of the site-isolated region of the substrate disposed under each process region to form a layer of a material;
- e. flowing a purge into a reactant inlet manifold, wherein the flow is evenly provided to a plurality of reactant flow channels;
- f. repeating steps b-e until a desired thickness of a material is deposited;
- and
- g. evaluating a property of the material at each site-isolated region.
13 more elements
Dependencies are inferred from the claim text.