High metal ionization sputter gun

A method to deposit a material, comprising:

• applying pulsing power to a sputter gun comprising a target, wherein the pulsing power is alternated between a first low power state and a first high power state according to a first duty cycle;
• applying RF power to a substrate support positioned below the sputter gun, wherein the RF power is alternated between a second low power state and a second high power state according to a second duty cycle;
• synchronizing the first duty cycle with the second duty cycle such that the pulsing power repeatedly increases from the first low power state to the first high power state at the same time the RF power increases from the second low power state to the second high power state and the pulsing power repeatedly decreases from the first high power state to the first low power state at the same time the RF power decreases from the second high power state to the second low power state, wherein the first duty cycle and the second duty cycle are each less than 30% such that an average power delivered to the sputter gun is less than about 1 kilowatt;
• and
• depositing a layer above a substrate disposed on the substrate support with material ejected from the target of the sputter gun.