Manufacturing method of semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsYukiteru Matsui, Akifumi Gawase, Hajime Eda
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Abstract
In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming a polish target film on a substrate and conducting a CMP process for the polish target film. The conducting the CMP process includes bringing a surface of the polish target film into contact with a surface of a polishing pad with a negative Rsk value, and adjusting friction dependency on polishing speed between the polish target film and the polishing pad to a value that restrains the occurrence of a stick slip to polish the polish target film.
Claims20
A manufacturing method of a semiconductor device comprising:
- forming a polish target film on a substrate;
- and
- conducting a CMP process for the polish target film,
- wherein conducting the CMP process comprises bringing a surface of the polish target film into contact with a surface of a polishing pad with a negative Rsk value, and adjusting friction dependency on polishing speed between the polish target film and the polishing pad to a value that restrains the occurrence of a stick slip to polish the polish target film.
A manufacturing method of a semiconductor device comprising:
- forming a polish target film on a substrate;
- and
- conducting a CMP process for the polish target film,
- wherein the CMP process comprises
- polishing the polish target film in such a manner that the surface of the polish target film is brought into contact with a surface of a polishing pad with a negative Rsk value and that the friction dependency on polishing speed between the polish target film and the polishing pad is beyond −0.2 Nm/rpm.
Dependencies are inferred from the claim text.