Negative-type photoresist composition for thick film and use thereof
AssigneeEverlight Chemical Industrial Corporation
InventorsYi Jing Chen, Nai Tien Chou, Hsin Yi Huang, Yen-Cheng Li
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AssigneeEverlight Chemical Industrial Corporation
InventorsYi Jing Chen, Nai Tien Chou, Hsin Yi Huang, Yen-Cheng Li
Estimating the term…
The present invention relates to a negative-type photoresist composition for thick film, comprising: (A) 20 to 50 wt % of an alkali-soluble resin which is polymerized from a plurality of kinds of monomers, wherein the monomers includes compounds represented by formulas (1A) and (1B), and based on the weight ratio of the monomers to the alkali-soluble resin, the sum of the formula (1A) compound and the formula (1B) compound are 20 to 60%, and X of the formula (1A) and (1B) may be independently H, methyl or ethyl. (B) 10 to 30 wt % of crosslinker which can be a bisphenol fluorene derivative monomer having at least one ethylenically unsaturated double bond; (C) 5 to 15 wt % of photo initiator; and (D) residual solvent. The present invention also relates to use of the above-mentioned negative-type photoresist compound for thick film.
A negative-type photoresist composition for thick film, comprising:
Dependencies are inferred from the claim text.