Light-source sensor integrated photoelectric conversion device
AssigneeKabushiki Kaisha Toshiba
InventorMasahiko Akiyama
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Abstract
A photoelectric conversion device including a substrate having opaque interconnection layers, an insulating film formed on the substrate, and having a plurality of openings, light-emitting elements formed of the openings, each light-emitting element having an upper electrode layer, and light-receiving elements formed of the openings, each light-receiving element having an upper electrode layer, wherein a semiconductor material is different in the light-emitting element and the light-receiving element, the upper electrode layer both of the light-emitting element and the light-receiving element are formed as common electrodes, and each interconnection layer is formed on a region outside a region specified by the opening.
Claims6
A photoelectric conversion device comprising:
- a substrate including opaque interconnection layers;
- an insulating film formed on the substrate, the insulating film including a plurality of openings which are separated apart in a substrate in-plane direction;
- light-emitting elements respectively formed in some of the plurality of openings, each light-emitting element including a light-emitting layer formed of a semiconductor material and an upper electrode layer;
- and
- light-receiving elements respectively formed in some of remaining openings of the plurality of openings, each light-receiving element including a light-receiving layer formed of a semiconductor material and an upper electrode layer,
- wherein the semiconductor material of the light-emitting element is different from the semiconductor material of the light-receiving element, the upper electrode layer of the light-emitting element and the upper electrode layer of the light-receiving element are formed as common electrodes continuously in a same layer, and each interconnection layer is formed on a region outside a region specified by the respective openings and is formed at an in-plane distance from a position immediately below respective openings of the insulating film by in-plane distances of twice or more of a distance corresponding to a thickness of the insulating film.
Dependencies are inferred from the claim text.