Semiconductor processing dispatch control

A method for semiconductor processing control, the method comprising:

• using at least one processor:
• identifying a key process stage from a plurality of process stages based on a parameter of processed wafers;
• clustering some of a first plurality of tools within one of the plurality of process stages into a tool cluster, wherein the clustering comprises:
• providing a data set of measured results of the parameter of the processed wafers, wherein the data set comprises a plurality of subsets, each of the plurality of subsets corresponding to the measured results of some of the processed wafers processed by one of the first plurality of tools;
• determining a first statistical representation of a tool effect for each of the first plurality of tools based on a respective corresponding one of the plurality of subsets;
• determining a pair-wise distance between respective first statistical representations for a pair of the first plurality of tools;
• and
• clustering the pair of the first plurality of tools when the pair-wise distance is below a defined threshold;
• forecasting a trend for a wafer processed by the key process stage and some of the plurality of process stages based on the parameter;
• and
• dispatching the wafer to one of a second plurality of tools in a tuning process stage, wherein the one of the second plurality of tools is determined based on the trend.

A system for semiconductor processing, the system comprising:

• a processing line comprising a key process stage and a tuning process stage, the key process stage most affecting an electrical parameter of a finished product, and the tuning process stage being subsequent to the key processing stage in the processing line;
• a tool effect module operable on a processor and operable to determine tool effects on the electrical parameter for tools in the key process stage and for tools in the tuning process stage, wherein the tool effect module is operable to cluster tools in at least one stage of the processing line by determining statistical representations of the tool effects based on measured results of processed wafers processed by the tools in the at least one stage, determining a pair-wise distance between respective statistical representations, and clustering the tools when the pair-wise distance is below a defined threshold;
• a trend forecast module operable on a processor and operable to determine a trend of the electrical parameter of a wafer that has been processed through the key process stage;
• and
• a dispatch control module operable on a processor and operable to determine a tuning tool in the tuning process stage that optimally compensates for the trend of the electrical parameter of the wafer and to dispatch the wafer to the tuning tool.