Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles
AssigneesUniversity of Massachusetts, The Regents of the University of California, Unist Academy-Industry Research Corporation
InventorsThomas P. Russell, Sung Woo Hong, Doug Hyun Lee, Soojin Park, Ting Xu
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Abstract
A block copolymer film having a line pattern with a high degree of long-range order is formed by a method that includes forming a block copolymer film on a substrate surface with parallel facets, and annealing the block copolymer film to form an annealed block copolymer film having linear microdomains parallel to the substrate surface and orthogonal to the parallel facets of the substrate. The line-patterned block copolymer films are useful for the fabrication of magnetic storage media, polarizing devices, and arrays of nanowires.
Claims23
A method of preparing a block copolymer film comprising a line pattern, comprising:
- forming a block copolymer film on a substrate surface comprising parallel facets;
- and
- annealing the block copolymer film to form an annealed block copolymer film comprising linear microdomains parallel to the substrate surface and orthogonal to the parallel facets;
- wherein the parallel facets of the substrate are characterized by a pitch, λ, having units of nanometers;
- wherein the block copolymer in bulk comprises a hexagonal array of cylindrical microdomains characterized by a center-to-center spacing, L2, of adjacent cylindrical microdomains, wherein L2 has units of nanometers;
- and
- wherein λ/L2 is either less than or equal to 0.73 or greater than or equal to 1.4.
Dependencies are inferred from the claim text.