Soft polishing pad for polishing a semiconductor substrate
AssigneeNexPlanar Corporation
InventorsWilliam Allison, Diane Scott, Robert Kerprich, Ping Huang, Richard Frentzel
Life of this patent
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Abstract
Soft polishing pads for polishing semiconductor substrates are described. A soft polishing pad includes a molded homogeneous polishing body having a thermoset, closed cell polyurethane material with a hardness approximately in the range of 20 Shore D to 45 Shore D.
Claims28
A method of fabricating a soft polishing pad for polishing a semiconductor substrate, the method comprising:
- mixing a pre-polymer, a primary curative, and a secondary curative different from the primary curative to form a mixture, wherein the primary curative is a diamine compound and the secondary curative is a diol compound, wherein mixing the pre-polymer, the primary curative, and the secondary curative to form the mixture comprises mixing with an approximate molar ratio of 100 parts of the pre-polymer, 85 parts of the primary curative, and 15 parts of the secondary curative;
- and
- curing the mixture to provide a homogeneous polishing body comprising a thermoset, closed cell polyurethane material having a hardness approximately in the range of 20 Shore D to 40 Shore D.
A soft polishing pad for polishing a semiconductor substrate, the soft polishing pad comprising:
- a homogeneous polishing body comprising a thermoset, closed cell polyurethane material fabricated from polytetramethylene glycol-toluene diisocyanate as a pre-polymer, a thioether aromatic diamine as a primary curative, and polyoxytetramethylene glycol as a secondary curative, wherein the pre-polymer, the primary curative, and the secondary curative have an approximate molar ratio of 100 parts of the pre-polymer, 85 parts of the primary curative, and 15 parts of the secondary curative, the homogeneous polishing body having a hardness approximately in the range of 20 Shore D to 40 Shore D.
A method of fabricating a soft polishing pad for polishing a semiconductor substrate, the method comprising:
- mixing, in a formation mold, a pre-polymer, a primary curative, and a secondary curative different from the primary curative to form a mixture, wherein mixing the pre-polymer, the primary curative, and the secondary curative to form the mixture comprises mixing with an approximate molar ratio of 100 parts of the pre-polymer, 85 parts of the primary curative, and 15 parts of the secondary curative;
- and
- curing the mixture to provide a molded homogeneous polishing body comprising a thermoset, closed cell polyurethane material having a hardness approximately in the range of 20 Shore D to 45 Shore D.
A soft polishing pad for polishing a semiconductor substrate, the soft polishing pad comprising:
- a homogeneous polishing body comprising a thermoset, closed cell polyurethane material fabricated from a polyurethane precursor pre-polymer, a primary curative, and a secondary curative different from the primary curative, wherein the primary curative is a diamine compound and the secondary curative is a diol compound, wherein the polyurethane precursor pre-polymer, the primary curative, and the secondary curative have an approximate molar ratio of 100 parts of the polyurethane precursor pre-polymer, 85 parts of the primary curative, and 15 parts of the secondary curative, the homogeneous polishing body having a hardness approximately in the range of 20 Shore D to 40 Shore D.
Dependencies are inferred from the claim text.