Semiconductor memory having both volatile and non-volatile functionality and method of operating
AssigneeZeno Semiconductor, Inc.
InventorYuniarto Widjaja
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Abstract
Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor storage device includes a plurality of memory cells each having a floating body for storing, reading and writing data as volatile memory. The device includes a floating gate or trapping layer for storing data as non-volatile memory, the device operating as volatile memory when power is applied to the device, and the device storing data from the volatile memory as non-volatile memory when power to the device is interrupted.
Claims20
A method of operating a semiconductor storage device comprising a plurality of memory cells connected in series and each having a floating body for storing, reading and writing data as volatile memory, and a floating gate or trapping layer above said floating body for storing data as non-volatile memory, the method comprising:
- transferring the data stored in the floating bodies, by a parallel, non-algorithmic process, to the floating gates or trapping layers corresponding to the floating bodies, when power to the device is interrupted;
- wherein if said volatile memory is in a first state, electrons are injected into said floating gate or trapping layer and if said memory cell is in a second state, no electron injection into said floating gate or trapping layer occurs.
A method of operating a semiconductor storage device comprising a plurality of memory cells connected in series and each having a floating body for storing, reading and writing data as volatile memory, and a floating gate or trapping layer above said floating body for storing data as non-volatile memory, the method comprising:
- restoring power to said memory cells;
- and
- transferring the data stored in the floating gates or trapping layers, by a parallel, non-algorithmic restore process, to the floating bodies corresponding to the floating gates or trapping layers, when power is restored to said memory cells.
A method of operating a semiconductor storage device comprising a plurality of memory cells connected in series and each having a floating body for storing, reading and writing data as volatile memory, and a floating gate or trapping layer above said floating body for storing data as non-volatile memory, the method comprising:
- transferring the data stored in the floating gates or trapping layers, by a parallel, non-algorithmic restore process, to the floating bodies corresponding to the floating gates or trapping layers, when power is restored to the cell, and
- restoring the floating gates or trapping layers to a predetermined charge state after the restore process.
Dependencies are inferred from the claim text.