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US 9,150,969 B2Granted
Method of etching metal layer
AssigneeTokyo Electron Limited
InventorsEiichi Nishimura, Fumiko Yamashita, Koyumi Sasa
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Abstract
In a method of etching a metal layer of an object to be processed, the metal layer is etched by ion sputtering etching while forming a protective film containing carbon on a surface of a mask of the object. The object is exposed to an oxygen plasma after etching the metal layer. The object is exposed to hexafluoroacetylacetone after exposing the object to the oxygen plasma.
Claims3
A method of etching a metal layer of an object with a patterned mask, comprising:
- a first process of etching the metal layer of the object by ion sputtering etching while forming a first protective film containing carbon and a metal originating from the metal layer on a surface of the patterned mask;
- a second process of performing an ashing process by using an oxygen plasma on the first protective film to remove the carbon contained in the first protective film and form a second protective film containing a metal oxide, the metal oxide being formed by bonding between the metal layer of the first protective film and oxygen from the oxygen plasma;
- and
- a third process including exposing the object to hexafluoroacetylacetone to remove the second protective film.
1 more element
Dependencies are inferred from the claim text.