Reactive contacts for 2D layered metal dichalcogenides

A method for forming a LMDC-based transistor device, the method comprising the steps of:

• forming a LMDC semiconductor material on a substrate;
• selectively depositing a contact metal onto portions of the LMDC semiconductor material that serve as source and drain regions of the transistor device;
• annealing the LMDC semiconductor material and the contact metal under conditions sufficient to react the contact metal with the LMDC semiconductor material and thereby form a buffer layer as an interface between the contact metal and the LMDC semiconductor material that compositionally is a transition from the LMDC semiconductor material to the contact metal and connects the LMDC semiconductor material and the contact metal by covalent bonds;
• depositing a gate dielectric onto exposed surfaces of the contact metal and the LMDC semiconductor material;
• and
• forming a gate on the gate dielectric over a portion of the LMDC semiconductor material that serves as a channel of the transistor device.

A LMDC-based transistor device, comprising:

• a LMDC semiconductor material on a substrate;
• a contact metal present on portions the LMDC semiconductor material that serve as source and drain regions of the transistor device;
• a buffer layer as an interface between the contact metal and the LMDC semiconductor material that compositionally is a transition from the LMDC semiconductor material to the contact metal and which connects the LMDC semiconductor material and the contact metal by covalent bonds;
• a gate dielectric on the contact metal and the LMDC semiconductor material;
• and
• a gate on the gate dielectric over a portion of the LMDC semiconductor material that serves as a channel of the transistor device.