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AssigneeFuji Electric Co., Ltd.
InventorTsunehiro Nakajima
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A method is disclosed for separating a support substrate from a solid-phase bonded wafer which includes a Si wafer and support substrate solid-phase bonded to back surface of the Si wafer. The method includes a step of irradiating the Si wafer with laser light with a wavelength which passes through the Si wafer and is focused on a solid-phase bonding interface between the Si wafer and support substrate to form a breaking layer in at least part of an outer circumferential portion of the solid-phase bonding interface, a step of separating the breaking layer; and a step of separating the solid-phase bonding interface. The method is capable of using a Si thin wafer without substantial wafer cracking at an initial stage where the wafer is inputted to a wafer process, capable of separating a support substrate from the Si thin wafer easily, and capable of reducing the wafer cost.
A method for separating a support substrate from a solid-phase bonded wafer which includes a Si wafer and the support substrate solid-phase bonded to a back surface of the Si wafer, the method comprising at least:
A method for manufacturing a semiconductor device, comprising at least:
Dependencies are inferred from the claim text.