Middle layer composition for trilayer patterning stack
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Yu Liu, Ching-Yu Chang
Life of this patent
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Abstract
Methods and materials for making a semiconductor device are described. The method includes forming a middle layer (ML) of a patterning stack (e.g., a tri-layer patterning stack such as a tri-layer resist) and forming a photoresist layer directly on the middle layer. The middle layer includes an additive component having a photo base generator (PBG). The substrate including the photoresist layer and the middle layer is then exposed to a radiation. A covalent bond between the ML and the photoresist layer may be formed.
Claims7
A method of making a semiconductor device, the method comprising:
- forming a middle layer (ML) comprising a photo base generator over a substrate, wherein the ML includes an additive component, the additive component including a photo base generator (PBG);
- forming a photoresist layer over the middle layer;
- providing a radiation beam incident the photoresist layer, wherein the radiation beam generates an acid component in the photoresist layer and a base component from the PBG in the middle layer;
- quenching the generated acid component in the photoresist layer with a first amount of the base component generated;
- baking the substrate after providing the radiation beam;
- and
- after initiating the baking, reacting a second amount of the base component generated in the middle layer wherein the reacting forms covalent bonds between the second amount of the base component in the middle layer and a component of the photoresist layer.
A method of making a semiconductor device, the method comprising:
- providing a semiconductor substrate;
- forming an underlying layer of a patterning stack on the semiconductor substrate, wherein the underlying layer includes an organic polymer;
- forming a middle layer (ML) of the patterning stack on the semiconductor substrate, wherein the middle layer includes an additive component having a photo base generator (PBG);
- forming a photoresist layer (PR) of the patterning stack directly on the middle layer;
- and
- exposing the semiconductor substrate to a radiation beam, wherein the exposing produces a sulfur ion (S—) from the PBG;
- and
- after initiating a baking process, covalently bonding the sulfur of the sulfur ion to a component of the PR.
Dependencies are inferred from the claim text.