Hybrid bonding mechanisms for semiconductor wafers
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPing-Yin Liu, Szu-Ying Chen, Chen-Jong Wang, Chih-Hui Huang, Xin-Hua Huang, Lan-Lin Chao, Yeur-Luen Tu, Chia-Chiung Tsai, Xiaomeng Chen
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Abstract
The embodiments of diffusion barrier layer described above provide mechanisms for forming a copper diffusion barrier layer to prevent device degradation for hybrid bonding of wafers. The diffusion barrier layer(s) encircles the copper-containing conductive pads used for hybrid bonding. The diffusion barrier layer can be on one of the two bonding wafers or on both bonding wafers.
Claims17
A semiconductor substrate, comprising:
- a conductive pad formed in and near a surface of the semiconductor substrate, wherein a surface of the conductive pad is exposed, and wherein the surface of the conductive pad usable for hybrid-bonding with another conductive pad of another substrate;
- a first barrier layer lining the conductive pad, wherein the first barrier layer separates a bottom surface of the conductive pad from the semiconductor substrate;
- a second barrier layer surrounding the conductive pad, wherein a surface of the second barrier layer is aligned with the surface of the conductive pad, and a thickness of the second barrier layer is greater than about 0.01 microns (μm);
- and
- an insulating material over the semiconductor substrate, wherein the second barrier layer is between the semiconductor substrate and the insulating material, and the insulating material is usable for hybrid-bonding with another insulating material of another substrate.
A hybrid-bonded structure, comprising:
- a first conductive pad of a first substrate bonded to a second conductive pad of a second substrate, wherein a surface of the first conductive pad opposite a surface of the first conductive pad bonded to the second conductive pad is separated from a top surface of the first substrate by a first diffusion barrier layer, and wherein the second conductive pad is separated from a remaining portion of the second substrate by a second diffusion barrier layer;
- a first dielectric region of the first substrate bonded to a second dielectric region of the second substrate;
- a third diffusion barrier layer of the first substrate bonded to a third dielectric region of the second substrate, wherein the third diffusion barrier layer surrounds the
- first conductive pad;
- and the third diffusion barrier layer has a thickness greater than about 0.01 microns (μm).
A hybrid-bonded structure, comprising:
- a first wafer, the first wafer comprising:
- a first conductive pad,
- a first barrier layer, wherein a bottom surface of the first conductive pad is separated from a top surface of the first wafer by the first barrier layer,
- a first dielectric region, and
- a first diffusion barrier layer surrounding the first conductive pad, wherein the first diffusion barrier separates the first conductive pad from the first dielectric region, the first diffusion barrier layer has a thickness greater than about 0.01 microns (μm), and separates the first dielectric region from the first wafer;
- and
- a second wafer bonded to the first wafer, the second wafer comprising:
- a second conductive pad,
- a second barrier layer, wherein the second conductive pad of the second wafer is separated from a portion of the second wafer by the second barrier layer, and
- a second dielectric region, wherein the second dielectric region is bonded to the first dielectric region.
Dependencies are inferred from the claim text.