Method for lithography patterning

A method of integrated circuit lithography, comprising:

• receiving a substrate;
• forming a material layer over the substrate;
• treating a top surface of the material layer with a resist outgassing suppressant (ROS);
• forming a resist layer over the treated top surface of the material layer;
• and
• patterning the resist layer using a radiation source.

A method of lithography patterning, comprising:

• providing a substrate;
• forming a resist underlayer over the substrate, wherein the resist underlayer includes a quencher or a base;
• forming a resist layer over the resist underlayer;
• exposing the resist layer to a radiation source that has wavelength less than 100 nm, wherein the resist underlayer acts to suppress outgassing from the resist layer;
• developing the resist layer to form a pattern;
• and
• transferring the pattern to the substrate to form an integrated circuit.