Bulk acoustic wave resonator having piezoelectric layer with multiple dopants
AssigneeAvago Technologies General IP (Singapore) Pte. Ltd.
InventorsKevin J. Grannen, Ivan Ionash, Chris Feng, Tina Lamers, John Choy
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Abstract
A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with multiple rare earth elements for improving piezoelectric properties of the piezoelectric layer.
Claims20
A bulk acoustic wave (BAW) resonator structure, comprising:
- a first electrode disposed over a substrate;
- a piezoelectric layer disposed over the first electrode, the piezoelectric layer comprising a piezoelectric material doped with a plurality of rare earth elements for improving piezoelectric properties of the piezoelectric layer;
- and
- a second electrode disposed over the piezoelectric layer.
A thin film bulk acoustic resonator (FBAR) structure, comprising:
- a substrate defining a cavity;
- a first electrode disposed over the substrate, at least a portion of the first electrode being formed over the cavity in the substrate;
- a piezoelectric layer disposed over the first electrode, the piezoelectric layer comprising a piezoelectric material doped with a plurality of rare earth elements for improving piezoelectric properties of the piezoelectric layer;
- and
- a second electrode disposed over the piezoelectric layer.
A solidly mounted resonator (SMR) structure, comprising:
- a substrate;
- an acoustic reflector formed on the substrate, the acoustic reflector comprising a plurality of acoustic impedance layers, wherein at least two of the acoustic impedance layers have different acoustic impedances;
- a first electrode disposed over the acoustic reflector;
- a piezoelectric layer disposed over the first electrode, the piezoelectric layer comprising a piezoelectric material doped with a plurality of rare earth elements for improving piezoelectric properties of the piezoelectric layer;
- and
- a second electrode disposed over the piezoelectric layer.
Dependencies are inferred from the claim text.