Method for restoring porous surface of dielectric layer by UV light-assisted ALD
AssigneeASM IP Holding B.V.
InventorsKiyohiro Matsushita, Hirofumi Arai
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Abstract
A method for restoring a porous surface of a dielectric layer formed on a substrate, includes: (i) providing in a reaction space a substrate on which a dielectric layer having a porous surface with terminal hydroxyl groups is formed as an outer layer; (ii) supplying gas of a Si—N compound containing a Si—N bond to the reaction space to chemisorb the Si—N compound onto the surface with the terminal hydroxyl groups; (iii) irradiating the Si—N compound-chemisorbed surface with a pulse of UV light in an oxidizing atmosphere to oxidize the surface and provide terminal hydroxyl groups to the surface; and (iv) repeating steps (ii) through (iii) to form a film on the porous surface of the dielectric layer for restoration.
Claims20
A method for restoring a porous surface of a dielectric layer formed on a substrate, comprising:
- (i) providing in a reaction space a substrate on which a dielectric layer having a porous surface with terminal hydroxyl groups is formed as an outer layer;
- (ii) supplying gas of a Si—N compound containing a Si—N bond to the reaction space without irradiating the substrate with UV light, to chemisorb the Si—N compound onto the surface with the terminal hydroxyl groups;
- (iii) irradiating the Si—N compound-chemisorbed surface with a pulse of UV light in an oxidizing atmosphere without gas of a Si—N compound containing a Si—N bond in the reaction space, to oxidize the surface and provide terminal hydroxyl groups to the surface;
- and
- (iv) repeating steps (ii) through (iii) to form a film on the porous surface of the dielectric layer for restoration.
Dependencies are inferred from the claim text.