Memory system having memory ranks and related tuning method
AssigneeSamsung Electronics Co., Ltd.
InventorsEunsung Seo, Chul-Sung Park, Chi-Sung Oh
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Abstract
A memory device comprises at least two memory ranks sharing input/output lines, at least one mode register configured to store bits used to tune delays of data signals of the at least two ranks output through the input/output lines, a controller configured to determine tuning parameters for the data signals based on the stored bits in the at least one mode register, the tuning parameters comprising at least the delays of the data signals, and at least one nonvolatile memory disposed in at least one of the at least two memory ranks and configured to store the tuning parameters.
Claims9
A tuning method for a memory device, comprising:
- operating least two memory ranks sharing input/output lines to generate pulses having a same phase from different DQ and DQS pins;
- generating a reference DQS pulse having a phase difference of 90 degrees from a latest DQ pulse among DQ pulses of the at least two memory ranks;
- aligning phases of DQ pulses of the at least two memory ranks by increasing or decreasing DQ delays based on the latest DQ pulse;
- aligning phases of DQS pulses with the at least two ranks by increasing or decreasing DQS delays based on the reference DQS pulse;
- and
- storing increasing or decreasing results of the DQ delay and the DQS delay in a nonvolatile memory.
A memory device comprising:
- at least one memory rank comprising a plurality of memory chips;
- at least one mode register configured to store bits used to tune electrical parameters of data signals of the at least two ranks output through the input/output lines;
- a controller configured to tune the electrical parameters based on the stored bits in the at least one mode register, the electrical parameters comprising alternating current (AC) timing parameters;
- and
- at least one nonvolatile memory disposed in at least one of the at least two memory ranks and configured to store the electrical parameters.
Dependencies are inferred from the claim text.