Oxide sputtering target and protective film for optical recording medium
AssigneeMitsubishi Materials Corporation
InventorsAtsushi Saito, Rie Mori
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Abstract
The present invention relates to an oxide sputtering target. By using the oxide sputtering target for formation of a protective film for an optical recording medium, a film, which has high storage stability and breakage resistance due to flexibility, can be deposited. Also, it can be utilized for direct-current sputtering and forms a less amount of particles during sputtering. The oxide sputtering target is made of an oxide sintered body including: with respect to a total content amount of metal compositions, 0.15 at % or more of one or more of Al, Ga, and In as a total content amount; 7 at % or more of Sn; and the balance Zn and inevitable impurities, wherein a total content amount of Al, Ga, In, and Sn is 36 at % or less.
Claims4
A oxide sputtering target made of an oxide sintered body comprising:
- with respect to a total content amount of metal compositions, 0.15 at % or more of one or more of Al, Ga, and In as a total content amount;
- 7 at % or more of Sn;
- and
- the balance Zn and inevitable impurities,
- wherein a total content amount of Al, Ga, In, and Sn is 36 at % or less,
- wherein the sputtering target comprises ZnO phase and Zn2SnO4 phase, and
- wherein a ratio of a peak near 27° corresponding to SnO2 to a peak near 34° corresponding to Zn2SnO4 is 1/100 or less.
A oxide sputtering target made of an oxide sintered body comprising:
- with respect to a total content amount of metal compositions, 0.15 at % or more of one or more of Al, Ga, and In as a total content amount;
- 7 at % or more of Sn;
- 1.0 to 20.0 at % of one or more of Ge and Cr as a total content amount;
- and
- the balance Zn and inevitable impurities,
- wherein a total content amount of Al, Ga, In, and Sn is 36 at % or less,
- wherein the sputtering target comprises ZnO phase and Zn2SnO4 phase, and
- wherein a ratio of a peak near 27° corresponding to SnO2 to a peak near 34° corresponding to Zn2SnO4 is 1/100 or less.
Dependencies are inferred from the claim text.