Gate valve unit, substrate processing device and substrate processing method thereof
AssigneeTokyo Electron Limited
InventorsKaoru Yamamoto, Masamichi Hara, Tetsuya Miyashita
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AssigneeTokyo Electron Limited
InventorsKaoru Yamamoto, Masamichi Hara, Tetsuya Miyashita
Estimating the term…
A substrate processing device includes a depressurizable hot wall chamber having a sidewall with a temperature which becomes higher than room temperature and a first substrate transferring port provided in the sidewall, a depressurizable transfer chamber having a transfer arm mechanism and a second substrate transferring port, and a gate valve unit provided between the hot wall chamber and the transfer chamber. The gate valve unit includes: a housing having a sidewall provided with communicating holes, a first housing substrate transferring port, and a second housing substrate transferring port; a valve body which is elevatable in the housing; and a double sealing structure having a first sealing member and a second sealing member provided at an outer side of the first sealing member. The communicating holes communicate a gap between the first sealing member and the second sealing member with an internal space of the housing.
A substrate processing device, comprising:
A substrate processing device, comprising:
A substrate processing device, comprising:
A gate valve unit, which is adapted to be provided between a depressurizable hot wall chamber, which has a sidewall with a temperature which becomes higher than room temperature and a first substrate transferring port provided in the sidewall, and a depressurizable transfer chamber having a transfer arm mechanism for transferring a substrate to and from the hot wall chamber and a second substrate transferring port provided in a sidewall of the transfer chamber, the gate valve unit comprising:
A substrate processing method using a substrate processing device comprising:
Dependencies are inferred from the claim text.