Insulation structure of high voltage electrodes for ion implantation apparatus
AssigneeSumitomo Heavy Industries Ion Technology Co., Ltd.
InventorsMasateru Sato, Hiroshi Matsushita
Life of this patent
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Abstract
An insulation structure of high voltage electrodes includes an insulator having an exposed surface and a conductor portion, which includes a joint region in contact with the insulator, and a heat-resistant portion provided, along at least part of an edge of the joint region, in such a manner as to be adjacent to the exposed surface of the insulator. The heat-resistant portion is formed of an electrically conductive material whose melting point is higher than that of the conductor portion. The heat-resistant portion may be so provided as to have a gap between the insulator and the exposed surface.
Claims23
An insulation structure of high voltage electrodes for an ion implantation apparatus, the insulation structure comprising:
- two conductor portions that are electrodes;
- and
- an insulator provided between the two conductor portions,
- wherein the two conductor portions are individually connected to the insulator,
- wherein the insulator has an exposed surface to a vacuum space,
- wherein each of the two conductor portions includes a conductor body having a joint region having contact with the insulator, an exposed region to the vacuum space, and a boundary zone lying between the joint region and the exposed region,
- wherein at least one of the two conductor portions has at least one heat-resistant conductor element disposed on the conductor body, and
- wherein the heat-resistant conductor element is provided on at least part of the boundary zone in such a manner as to be adjacent to the exposed surface of the insulator, and the heat-resistant conductor element is formed of a conductive material whose melting point is higher than that of the conductor portion.
An insulation structure of high voltage electrodes for an ion implantation apparatus, the insulation structure comprising:
- two conductor portions that are electrodes;
- and
- an insulator provided between the two conductor portions,
- wherein the two conductor portions are individually connected to the insulator,
- wherein the insulator has an exposed surface to an atmospheric space,
- wherein each of the two conductor portions includes a conductor body having a joint region having contact with the insulator, an exposed region to the atmospheric space, and a boundary zone lying between the joint region and the exposed region,
- wherein at least one of the two conductor portions has at least one heat-resistant conductor element disposed on the conductor body, and
- wherein the heat-resistant conductor element is provided on at least part of the boundary zone in such a manner as to be adjacent to the exposed surface of the insulator, and the heat-resistant conductor element is formed of a conductive material whose melting point is higher than that of the conductor portion.
An insulation structure of high voltage electrodes for an ion implantation apparatus, the insulation structure comprising:
- two conductor portions that are electrodes;
- and
- an insulator provided between the two conductor portions,
- wherein the two conductor portions are individually connected to the insulator,
- wherein the insulator has a first exposed surface to a vacuum space and a second exposed surface to an atmospheric space,
- wherein each of the two conductor portions includes a conductor body having a joint region having contact with the insulator, a first exposed region to the vacuum space, a second exposed region to the atmospheric space, a first boundary zone lying between the joint region and the first exposed region, and a second boundary zone lying between the joint region and the second exposed region,
- wherein at least one of the two conductor portions has at least one heat-resistant conductor element disposed on the conductor body, and
- wherein the heat-resistant conductor element is provided on at least part of the first boundary zone and/or the second boundary zone in such a manner as to be adjacent to the exposed surface of the insulator, and the heat-resistant conductor element is formed of a conductive material whose melting point is higher than that of the conductor portion.
An insulation structure of high voltage electrodes for an ion implantation apparatus, the insulation structure comprising:
- two conductor portions that are electrodes;
- and
- an insulator provided between the two conductor portions,
- wherein the two conductor portions are individually connected to the insulator,
- wherein the insulator has an exposed surface to a fluid space,
- wherein each of the two conductor portions includes a conductor body having a joint region having contact with the insulator, an exposed region to the fluid space, and a boundary zone lying between the joint region and the exposed region,
- wherein at least one of the two conductor portions has at least one heat-resistant conductor element disposed on the conductor body, and
- wherein the heat-resistant conductor element is provided on at least part of the boundary zone in such a manner as to be adjacent to the exposed surface of the insulator, and the heat-resistant conductor element is formed of a conductive material whose melting point is higher than that of the conductor portion.
Dependencies are inferred from the claim text.