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US 9,114,438 B2Granted
Copper residue chamber clean
AssigneeApplied Materials, Inc.
InventorsMark Hoinkis, Chun Yan, Hiroyuki Miyazoe, Eric Joseph
Life of this patent
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Abstract
Methods of removing copper residue from interior surfaces of an etch process chamber are described. A plasma treatment using halogen-containing precursors transforms the copper residue into halogen-copper complexes. Plasma-excited inert gases are used to desorb the halogen-copper complexes. In this way, the copper residue is removed from the interior surfaces of the etch process chamber.
Claims13
A method of cleaning a dielectric window comprising:
- flowing a halogen-containing precursor into a substrate processing region while forming a first local plasma in the substrate processing region having a first local plasma power to form excited halogen-containing species, wherein a copper residue on interior surfaces of the dielectric window is transformed into a copper halogen layer on the dielectric window;
- flowing an inert gas into the substrate processing region while forming a second local plasma in the substrate processing region having a second local plasma power, wherein the copper halogen layer is desorbed as desorbed species from the dielectric window and wherein the second local plasma occurs after the first local plasma, wherein the substrate processing region is devoid of halogens during the second local plasma aside from the desorbed species.
A method of cleaning a dielectric window comprising:
- flowing a halogen-free precursor into a substrate processing region while forming a subtractive etch local plasma in the substrate processing region having a subtractive etch local plasma power to form excited halogen-free species, wherein the subtractive etch local plasma etches copper from a substrate and leaves a copper residue on the interior surfaces of the dielectric window;
- removing the substrate from the substrate processing region;
- flowing a halogen-containing precursor into the substrate processing region while forming a halogen local plasma in the substrate processing region having a halogen local plasma power to form excited halogen-containing species, wherein the halogen local plasma transforms a copper residue on the interior surfaces of the dielectric window into a copper halogen layer;
- and
- flowing an inert gas into the substrate processing region while forming an inert gas local plasma in the substrate processing region having an inert gas local plasma power, wherein the copper halogen layer is desorbed as desorbed species from the dielectric window and wherein the inert gas local plasma occurs after the halogen local plasma, wherein the substrate processing region is devoid of halogens during the inert as local plasma aside from the desorbed species.
2 more elements
Dependencies are inferred from the claim text.