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US 9,111,749 B2Granted
Silane or borane treatment of metal thin films
AssigneeASM IP Holdings B.V.
InventorsEric Shero, Suvi Haukka
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Abstract
The negative effect of oxygen on some metal films can be reduced or prevented by contacting the films with a treatment agent comprising silane or borane. In some embodiments, one or more films in an NMOS gate stack are contacted with a treatment agent comprising silane or borane during or after deposition.
Claims27
A method of reducing oxidation at an interface between two different metal-containing thin films comprising:
- providing a substrate comprising a first metal-containing thin film;
- contacting the first metal-containing thin film with a silane compound or a borane compound;
- after contacting the substrate with the silane compound or borane compound, depositing a second metal-containing thin film over the first thin film.
A method for depositing a metal layer over an etch stop layer, the method comprising, sequentially:
- providing a substrate comprising an etch stop layer;
- contacting the etch stop layer with a silane compound or a borane compound;
- and
- depositing a metal-containing layer over the first etch stop layer.
1 more element
Dependencies are inferred from the claim text.