Optical recording medium
AssigneeSony Corporation
InventorsTakahiro Igari, Makoto Watanabe
Life of this patent
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Abstract
An optical recording medium includes a recording layer including a reflective layer, two dielectric layers, and a phase-change recording layer. The phase-change recording layer-side dielectric layer of the two dielectric layers contains tantalum oxide or a composite oxide composed of silicon oxide, indium oxide, and zirconium oxide. The reflective layer-side dielectric layer of the two dielectric layers contains a composite oxide composed of silicon oxide, indium oxide, and zirconium oxide, a composite oxide composed of indium oxide and gallium oxide, or a composite oxide composed of zinc oxide and aluminum oxide.
Claims6
An optical recording medium comprising:
- a recording layer including a reflective layer, two dielectric layers, and a phase-change recording layer,
- wherein the phase-change recording layer-side dielectric layer of the two dielectric layers contains tantalum oxide or a composite oxide composed of silicon oxide, indium oxide, and zirconium oxide;
- and
- the reflective layer-side dielectric layer of the two dielectric layers contains a composite oxide composed of silicon oxide, indium oxide, and zirconium oxide, a composite oxide composed of indium oxide and gallium oxide, or a composite oxide composed of zinc oxide and aluminum oxide;
- wherein the phase-change recording layer contains bismuth, germanium, tellurium, and silver;
- and
- wherein a content of silver relative to a total amount of bismuth, germanium, tellurium, and silver is within a range of 2.0 atomic % or more and 3.5 atomic % or less.
An optical recording medium comprising:
- a recording layer including a reflective layer, two dielectric layers, and a phase-change recording layer,
- wherein the phase-change recording layer-side dielectric layer of the two dielectric layers contains tantalum oxide or a composite oxide composed of silicon oxide, indium oxide, and zirconium oxide;
- and
- the reflective layer-side dielectric layer of the two dielectric layers contains a composite oxide composed of silicon oxide, indium oxide, and zirconium oxide, a composite oxide composed of indium oxide and gallium oxide, or a composite oxide composed of zinc oxide and aluminum oxide wherein the phase-change recording layer-side dielectric layer of the two dielectric layers contains tantalum oxide.
Dependencies are inferred from the claim text.