Anti-reflective coatings using vinyl ether crosslinkers
AssigneeBrewer Science Inc.
InventorsDouglas J. Guerrero, Robert Christian Cox, Marc W. Weimer
Life of this patent
Estimating the term…
Abstract
Novel, wet developable anti-reflective coating compositions and methods of using those compositions are provided. The compositions comprise a polymer and/or oligomer having acid functional groups and dissolved in a solvent system along with a crosslinker and a photoacid generator. The preferred acid functional group is a carboxylic acid, while the preferred crosslinker is a vinyl ether crosslinker. In use, the compositions are applied to a substrate and thermally crosslinked. Upon exposure to light, the cured compositions will decrosslink, rendering them soluble in typical photoresist developing solutions (e.g., alkaline developers).
Claims13
A method of forming a microelectronic structure, said method comprising the steps of:
- providing a substrate having a surface;
- applying a composition to said surface, said composition comprising:
- a compound selected from the group consisting of polymers, oligomers, and mixtures thereof, said compound comprising acid groups other than phenolic groups, and having protected acid groups and unprotected acid groups, wherein the molar ratio of protected acid groups to unprotected acid groups is from about 1:3 to about 3:1;
- a chromophore;
- a vinyl ether crosslinker;
- and
- a solvent system, said compound, chromophore, and crosslinker being dissolved or dispersed in said solvent system;
- and
- crosslinking the compound in said composition to yield a crosslinked composition having a k value of about 0.1-0.8 at a wavelength selected from the group consisting of 157 nm, 193 nm, 248 nm, and 365 nm.
A method of forming a microelectronic structure, said method comprising the steps of:
- providing a substrate having a surface;
- applying a composition to said surface, said composition comprising:
- a compound selected from the group consisting of polymers, oligomers, and mixtures thereof, said compound comprising acid groups, and having protected acid groups and unprotected acid groups, wherein the molar ratio of protected acid groups to unprotected acid groups is from about 1:3 to about 3:1;
- a chromophore;
- a vinyl ether crosslinker;
- and
- from about 95-99% by weight of a solvent system, based upon the total weight of the composition taken as 100% by weight, said compound, chromophore, and crosslinker being dissolved or dispersed in said solvent system;
- and
- crosslinking the compound in said composition to yield a crosslinked composition having a k value of about 0.1-0.8 at a wavelength selected from the group consisting of 157 nm, 193 nm, 248 nm, and 365 nm.
A method of forming a microelectronic structure, said method comprising the steps of:
- providing a substrate having a surface;
- applying a composition to said surface, said composition comprising:
- a compound selected from the group consisting of polymers, oligomers, and mixtures thereof, said compound comprising acid groups other than phenolic groups, and having protected acid groups and unprotected acid groups, wherein the molar ratio of protected acid groups to unprotected acid groups is from about 1:3 to about 3:1;
- from about 20 to about 40% by weight of a chromophore, based upon the total weight of the compound taken as 100% by weight;
- a vinyl ether crosslinker;
- and
- a solvent system, said compound, chromophore, and crosslinker being dissolved or dispersed in said solvent system;
- and
- crosslinking the compound in said composition.
Dependencies are inferred from the claim text.