US 9,108,289 B2Granted

Double-side polishing apparatus

AssigneeShin-Etsu Handotai Co., Ltd.

InventorsDaisuke Furukawa, Kazumasa Asai, Takahiro Kida, Tadao Tanaka

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Abstract

A wafer polishing apparatus configured to polish simultaneously both surfaces of a wafer by pressing and rubbing the wafer, while holding the wafer with: a lower turn table having a flat polishing-upper-surface rotationally driven; an upper turn table having a flat polishing-lower-surface rotationally driven, the upper turn table being arranged with facing to the lower turn table; and a carrier having a wafer-holding hole for holding the wafer, wherein the polishing is performed while measuring a thickness of the wafer through a plurality of openings provided between a rotation center and an edge of the upper turn table or the lower turn table, and switching a polishing slurry with a polishing slurry having a different polishing rate during the polishing of the wafer. As a result, the wafer polishing apparatus can manufacture a wafer having a high flatness and a high smoothness at high productivity and high yield.

Claims6

Dependent claims

A double-side polishing apparatus comprising:

a lower turn table having a flat polishing-upper-surface that is rotationally driven;
an upper turn table having a flat polishing-lower-surface that is rotationally driven, the upper turn table being arranged to face the lower turn table;
a carrier having a wafer-holding hole configured to hold a silicon wafer to be polished;
a plurality of openings provided between a rotation center and an edge of the upper turn table, the plurality of openings being equally spaced at a periphery of the upper turn table;
and
a wafer-thickness-measuring mechanism configured to measure a thickness of the silicon wafer through the plurality of openings by optical reflection interferometry during polishing in real time, the wafer-thickness-measuring mechanism being fixed to a housing of the double-side polishing apparatus and including a wavelength-variable-infrared laser having a wavelength of 1575 nm to 1775 nm that is transmittable through the silicon wafer to be polished.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/446,847Filed 30 Jul 2014 · division
Priority: JP 2008-19747831 Jul 2008
Published: US 2015/0031271 A129 Jan 2015
Granted: 18 Aug 2015
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

B24B 37/013
Control means for lapping machines or devices: devices or means for detecting lapping completion
B24B 37/042
Designed for working plane surfaces: operating processes therefor
B24B 37/08
Characterised by the movement of the work or lapping tool: for double side lapping
B24B 49/04
According to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent:…

Family

PCT/JP2009/003021Parent of this division · filed 30 Jun 2009
US 2015/0031271 A1Pre-grant publication · published 29 Jan 2015
Application13/002,449Parent of this division
US 8,834,230 B2Parent of this division
US 2011/0130073 A1Published application
US 9,108,289 B2This patent

From the US filing history. Foreign family members aren’t listed.