HBT cascode cell
AssigneeTeledyne Scientific & Imaging, LLC
InventorJonathan B. Hacker
Life of this patent
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Abstract
A cascode gain stage apparatus includes a common-emitter connected transistor having a first base metal contact, first emitter metal contact, a first collector metal contact and a u-shaped first collector interface metal; and a common-base connected transistor having a second emitter metal contact, a second base metal contact, and a second collector metal contact, the second emitter metal contact in communication with the first collector metal contact through a transistor interconnect metallic strap, the second emitter metal contact disposed between the first collector metal contact and the second base metal contact. With this configuration, the first collector metal contact and second emitter metal contact are connected by the transistor interconnect metallic strap without high-aspect ratio traces to reduce crossover coupling.
Claims20
A cascode gain stage apparatus, comprising:
- a common-emitter connected transistor having a first base metal contact, first emitter metal contact, a first collector metal contact;
- and
- a common-base connected transistor having a second emitter metal contact, a second base metal contact, and a second collector metal contact, the second emitter metal contact in communication with the first collector metal contact through a transistor interconnect metallic strap, the second emitter metal contact disposed between the first collector metal contact and the second base metal contact;
- wherein the first collector metal contact and second emitter metal contact are connected by the transistor interconnect metallic strap.
An array of cascode gain stages, comprising:
- a plurality of a common-emitter connected transistors each having a first base metal contact, first emitter metal contact and a first collector metal contact;
- and
- a plurality of common-base connected transistors each comprising:
- a second emitter metal contact,
- a second base metal contact,
- a second collector metal contact;
- and
- a u-shaped second collector interface metal connected to the second collector metal contact, the u-shaped second collector interface metal having a plurality of collector arms;
- a plurality of transistor interconnect metallic straps electrically coupled between each of the plurality of second emitter metal contacts and each of the plurality of first collector metal contacts, each of the plurality of second emitter metal contacts disposed between each of the plurality of first collector metal contacts and each of the plurality of second base metal contacts,
- a slotted base intra-connect metallic strap in communication with each of the plurality of second base metal contacts, the slotted base intra-connect metallic strap having a plurality of cutouts with each respective cutout disposed above a respective collector arm in each of the plurality of common-base connected transistors;
- wherein each cutout reduces collector-base coupling and base inductance and each of the plurality of first collector metal contacts and each of the plurality of second emitter metal contacts are connected by each of the plurality of transistor interconnect metallic straps.
A transistor, comprising:
- a base metal contact on a substrate;
- a collector metal contact disposed on a u-shaped first collector interface metal, the u-shaped first collector interface metal having first and second collector arms on the substrate;
- an emitter metal contact configured in a fin extending from an emitter strip in the substrate;
- and
- a slotted base intra-connect metallic strap disposed on the base metal contact, the slotted base intra-connect metallic strap having a first and second cutout disposed above the first and second collector arms of the u-shaped first collector interface metal.
Dependencies are inferred from the claim text.