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US 9,099,563 B2Granted
Stable amorphous metal oxide semiconductor
AssigneeCbrite Inc.
InventorsChan-Long Shieh, Gang Yu
Life of this patent
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Abstract
A thin film semiconductor device has a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide and an amorphous insulating covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a conductive channel, and a gate terminal is positioned in communication with the conductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.
Claims25
A thin film semiconductor device comprising:
- a semiconductor layer;
- source/drain electrodes positioned in communication with the semiconductor layer and defining a conductive channel in the semiconductor layer;
- a gate electrode in communication with the conductive channel and positioned to control conduction of the channel;
- the semiconductor layer including an amorphous insulating covalent metal oxide material and an amorphous semiconductor ionic metal oxide material;
- the amorphous insulating covalent metal oxide material and the amorphous semiconductor ionic metal oxide material being mixed in a predetermined ratio that forms a continuous network of the amorphous semiconductor ionic metal oxide material and prevents the amorphous semiconductor ionic metal oxide material from becoming poly crystalline at processing temperatures;
- the mixture of the amorphous insulating covalent metal oxide material and the amorphous semiconductor ionic metal oxide material being deposited in an orientation supported by a substrate in one of a top gate bottom source/drain electrodes;
- top gate top source/drain electrodes;
- bottom gate bottom source drain electrodes;
- and bottom gate top source drain configuration electrodes;
- and
- the mixture of the amorphous insulating covalent metal oxide material and the amorphous semiconductor ionic metal oxide material having a carrier concentration determined by one of oxygen and nitrogen being included during the deposition.
8 more elements
A thin film semiconductor device comprising:
- a semiconductor layer;
- a pair of electrodes positioned in communication with the semiconductor layer and defining a conductive channel in the semiconductor layer;
- a gate electrode in communication with the conductive channel and positioned to control conduction of the channel;
- the semiconductor layer including an amorphous insulating covalent metal oxide material and an amorphous semiconductor ionic metal oxide material, the amorphous insulating covalent metal oxide material and the amorphous semiconductor ionic metal oxide material being mixed in a predetermined ratio that forms a continuous network of the amorphous semiconductor ionic metal oxide material and prevents the amorphous semiconductor ionic metal oxide material from becoming poly crystalline at processing temperatures;
- the mixture of the amorphous insulating covalent metal oxide material and the amorphous semiconductor ionic metal oxide material being deposited on a supporting structure;
- and
- the mixture of the amorphous insulating covalent metal oxide material and the amorphous semiconductor ionic metal oxide material having a carrier concentration determined by one of oxygen and nitrogen being included during the deposition.
4 more elements
A thin film semiconductor device comprising:
- a semiconductor layer;
- a pair of electrodes positioned in communication with the semiconductor layer and defining a conductive channel in the semiconductor layer;
- a gate electrode in communication with the conductive channel and positioned to control conduction of the channel;
- the semiconductor layer including an amorphous insulating covalent metal oxide material including one of aluminum oxide, silicon oxide, magnesium oxide, beryllium oxide, boron oxide, or combinations thereof and an amorphous semiconductor ionic metal oxide material including one of zinc oxide, indium oxide, tin oxide, gallium oxide, cadmium oxide, or combinations thereof, the amorphous insulating covalent metal oxide material and the amorphous semiconductor ionic metal oxide material being mixed in a predetermined ratio that forms a continuous network of the amorphous semiconductor ionic metal oxide material and prevents the amorphous semiconductor ionic metal oxide material from becoming poly crystalline at processing temperatures;
- the mixture of the amorphous insulating covalent metal oxide material and the amorphous semiconductor ionic metal oxide material being deposited on a supporting structure;
- and
- the mixture of the amorphous insulating covalent metal oxide material and the amorphous semiconductor ionic metal oxide material having a carrier concentration determined by one of oxygen and nitrogen being included during the deposition.
4 more elements
Dependencies are inferred from the claim text.